Analysis of breakdown probabilities in avalanche photodiodes using a history-dependent analytical model

被引：45

作者：

Wang, S ^{[1
]}

Ma, F ^{[1
]}

Li, XW ^{[1
]}

Karve, G ^{[1
]}

Zheng, XG ^{[1
]}

Campbell, JC ^{[1
]}

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 12期

关键词：

D O I：

10.1063/1.1559946

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The breakdown probabilities of avalanche photodiodes (APDs) working in the Geiger mode are analyzed using a history-dependent analytical impact-ionization model [R. J. McIntyre, IEEE Trans. Electron Devices 46, 1623 (1999)]. The breakdown sharpness in devices with thin and thick multiplication regions is found to follow the same trend in GaAs, InAlAs, and InP material systems. Breakdown characteristics of InP and InAlAs are compared for their applications in photon counting at telecommunication wavelengths. (C) 2003 American Institute of Physics.

引用

页码：1971 / 1973

页数：3

共 15 条

[1] ''Universal'' dependence of avalanche breakdown on bandstructure: Choosing materials for high-power devices [J].

Allam, J .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (3B) :1529-1542

[2] Avalanche photodiodes and quenching circuits for single-photon detection [J].

Cova, S ;

Ghioni, M ;

Lacaita, A ;

Samori, C ;

Zappa, F .

APPLIED OPTICS, 1996, 35 (12) :1956-1976

[3]

HAYAT MM, IN PRESS IEEE J QUAN

[4] Performance and design of InGaAs/InP photodiodes for single-photon counting at 1.55 μm [J].

Hiskett, PA ;

Buller, GS ;

Loudon, AY ;

Smith, JM ;

Gontijo, I ;

Walker, AC ;

Townsend, PD ;

Robertson, MJ .

APPLIED OPTICS, 2000, 39 (36) :6818-6829

[5] Single-photon detection beyond 1 mu m: Performance of commercially available InGaAs/InP detectors [J].

Lacaita, A ;

Zappa, F ;

Cova, S ;

Lovati, P .

APPLIED OPTICS, 1996, 35 (16) :2986-2996

[6] Calculation of gain and noise with dead space for GaAs and AlxGa1-xAs avalanche photodiode [J].

Li, XW ;

Zheng, XG ;

Wang, SL ;

Ma, F ;

Campbell, JC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (07) :1112-1117

[7] AVALANCHE INITIATION PROBABILITY OF AVALANCHE-DIODES ABOVE BREAKDOWN VOLTAGE [J].

MCINTYRE, RJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (07) :637-641

[8] A new look at impact ionization - Part I: A theory of gain, noise, breakdown probability, and frequency response [J].

McIntyre, RJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (08) :1623-1631

[9] MULTIPLICATION NOISE IN UNIFORM AVALANCHE DIODES [J].

MCINTYRE, RJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :164-+

[10] TRIGGERING PHENOMENA IN AVALANCHE-DIODES [J].

OLDHAM, WG ;

SAMUELSON, RR ;

ANTOGNETTI, P .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (09) :1056-+

← 1 2 →