Excess conductivity and pseudo-gap state in YBCO single crystals slightly doped with Al and Pr

被引：44

作者：

Vovk, R. V.

Obolenskii, M. A.

Zavgorodniy, A. A.

Bondarenko, A. V.

Goulatis, I. L.

Chroneos, A. ^{[1
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2BP, England

[2] Kharkov Natl Univ, UA-61077 Kharkov, Ukraine

[3] NCSR Demokritos, Inst Microelect, Aghia Paraskevi 15310, Greece

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2007年 / 18卷 / 08期

关键词：

D O I：

10.1007/s10854-006-9086-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work we investigate the conductivity in the base plane of YBa2Cu3O7 (YBCO) single crystals with slight (up to 5%) aluminiurn (Al) and praseodymium (Pr) doping and with a given topology of plane defects. The results indicate that the doping with Al and Pr results to the increase of the number of the effective scattering centers of the normal carriers. The excess conductivity for the analyzed single crystals, within a wide temperature interval, is described by an exponential temperature dependence. Near the critical temperature (T-c) it is well approximated by the Aslamazov-Larkin theoretical model. A small doping with Pr enhances a significant narrowing regarding the temperature interval in which the pseudo-gap (PG) is realised. On the contrary, the Al doping with the same concentration results to the expansion of the temperature interval of excess conductivity existence.

引用

页码：811 / 815

页数：5

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