Plasma-induced damage to n-type GaN

被引：89

作者：

Choi, HW

Chua, SJ ^{[1
]}

Raman, A

Pan, JS

Wee, ATS

机构：

[1] Natl Univ Singapore, Ctr Optoelect, Dept Elect Engn, Singapore 119260, Singapore

[2] Inst Mat Res & Engn, Singapore 117602, Singapore

[3] Natl Univ Singapore, Dept Phys, Surface Sci Lab, Singapore 119260, Singapore

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 12期

关键词：

D O I：

10.1063/1.1311605

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of plasma etching on 1/f noise and photoluminescence (PL) characteristics of n-GaN have been investigated. A reduction of 1/f noise was observed after plasma exposure, a result of enhanced passivation of the reactive surface. This is attributed to the removal of carbon and the creation of a Ga-rich surface by the etching process. Nevertheless, the formation of nonradiative recombination centers impaired the PL intensity. Reconstruction of a stoichiometric surface was achieved by annealing. This induced the incorporation of carbon into GaN, deteriorating the PL performance further, but it could be restored by a chemical treatment of 10:1 HF:H2O. (C) 2000 American Institute of Physics. [S0003-6951(00)04138-3].

引用

页码：1795 / 1797

页数：3

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