Subfemtojoule 0.15 mu m InGaP/InGaAs/GaAs pseudomorphic HEMT DCFL circuits under 1 V supply voltage

We fabricated side-wall assisted 0.15 mu m T-shaped gate pseudomorphic HEMT DCFL circuits with InGaP donor layer and obtained 223 ps basic delay and 0.8 fJ power-delay products at a supply voltage Vdd of 0.6 V with the driver gate width of 2 mu m. A master-slave type divide-by-two frequency divider which consists of eight 2-input NAND gates using dual gate electrode structure shows stable operation of 10 GHz toggle frequency with a power consumption of 4.5 mW at Vdd of 0.8 V.