Effect of the projectile parameters on the charge state formation process in solid sputtering

被引：2

作者：

Belykh, SF ^{[1
]}

Palitsin, VV ^{[1
]}

Adriaens, A ^{[1
]}

Adams, F ^{[1
]}

机构：

[1] Univ Instelling Antwerp, Dept Chem, B-2610 Antwerp, Belgium

来源：

APPLIED SURFACE SCIENCE | 2003年 / 203卷

关键词：

atomic and molecular ion-solid interaction; ionization probability; secondary ion mass spectrometry; silicon sputtering; kinetic energy spectra;

D O I：

10.1016/S0169-4332(02)00714-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

An effect of atomic and molecular projectile parameters on the charge state formation process in silicon sputtering has been studied. It was found that the electronic subsystem excitation in a subsurface region of silicon depends on projectile parameters and it affects the ionization probability P+ of sputtered atoms. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：126 / 129

页数：4

共 11 条

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