A growth pathway for highly ordered quantum dot arrays

被引：44

作者：

Liang, JY ^{[1
]}

Luo, HL ^{[1
]}

Beresford, R ^{[1
]}

Xu, J ^{[1
]}

机构：

[1] Brown Univ, Div Engn, Providence, RI 02912 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 24期

关键词：

D O I：

10.1063/1.1834987

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To realize the desired zero-dimensional behavior of a quantum dot ensemble, the ability to fabricate quantum dots with a high packing density and a high degree of size, shape, and spacing uniformity is crucial. Here we report highly ordered InAs nanodot arrays grown by molecular-beam epitaxy on nonlithographically nanopatterned GaAs. Approximately 20 billion dots are grown in a 1 cm(2) area with the smallest size dispersion ever reported and forming a lateral superlattice in hexagonal dense packing form. These techniques presage a pathway to controlled growth of periodic quantum dot superstructures, which offer macroscopic spatial coherence in the interaction of quantum dots with radiation. (C) 2004 American Institute of Physics.

引用

页码：5974 / 5976

页数：3

共 12 条

[1]

Buhro WE, 2003, NAT MATER, V2, P138, DOI 10.1038/nmat844

[2] GROWTH OF III-V SEMICONDUCTORS BY MOLECULAR-BEAM EPITAXY AND THEIR PROPERTIES [J].