Formation of a 100-μm-wide stepfree GaAs (111)B surface obtained by finite area metalorganic vapor phase epitaxy

被引：6

作者：

Nishida, T ^{[1
]}

Kobayashi, N ^{[1
]}

机构：

[1] NTT, Basic Res Labs, Kanagawa 24301, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 1AB期

关键词：

MOVPE; GaAs; selective-growth; atomic-step; surface; (111)B;

D O I：

10.1143/JJAP.37.L13

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To perfectly flatten crystal facets, we propose a procedure that utilizes the balance between growth-material supply and desorption. By the suppression of two dimensional nucleation due to this desorption balance, stepfree facets can be obtained however large their area becomes, as long as their size is finite. We also confirm the validity of this assumption by obtaining a 100-mu m-wide atomically stepfree surface on a GaAs (111)B substrate by using metalorganic vapor phase epitaxy.

引用

页码：L13 / L14

页数：2

共 9 条

[1] QUANTUM CASCADE LASER [J].

FAIST, J ;

CAPASSO, F ;

SIVCO, DL ;

SIRTORI, C ;

HUTCHINSON, AL ;

CHO, AY .

SCIENCE, 1994, 264 (5158) :553-556

[2] Step-free surface grown on GaAs (111)B substrate by selective area metalorganic vapor phase epitaxy [J].

Nishida, T ;

Kobayashi, N .

APPLIED PHYSICS LETTERS, 1996, 69 (17) :2549-2550

[3] Phase diagram of GaAs (111)B surface during metal-organic chemical vapor deposition measured by surface photo-absorption [J].

Nishida, T ;

Uwai, K ;

Kobayashi, Y ;

Kobayashi, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1995, 34 (12A) :6326-6330

[4] Formation of a step-free InAs quantum well selectively grown on a GaAs (111)B substrate [J].

Nishida, T ;

Kobayashi, N .

JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (10) :1214-1220

[5] A step-free InAs quantum well selectively grown on a GaAs (111)B substrate [J].

Nishida, T ;

Kobayashi, N .

APPLIED PHYSICS LETTERS, 1997, 70 (20) :2726-2728

[6] Low temperature growth of GaAs and InAs/GaAs quantum well on (111)B substrate by metalorganic vapor phase epitaxy [J].

Nishida, T ;

Kobayashi, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (7B) :L930-L932

[7] Limit of electron mobility in AlGaAs/GaAs modulation-doped heterostructures [J].

Saku, T ;

Horikoshi, Y ;

Tokura, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (1A) :34-38

[8] EFFECTS OF INTERFACE FLATNESS AND ABRUPTNESS ON OPTICAL AND ELECTRICAL CHARACTERISTICS OF GAAS/ALGAAS QUANTUM STRUCTURES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J].

SHINOHARA, M ;

YOKOYAMA, H ;

INOUE, N .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (04) :1773-1779

[9] SPECTRAL OBSERVATION OF AS-STABILIZED GAAS-SURFACES IN METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION USING SURFACE PHOTOABSORPTION [J].

YAMAUCHI, Y ;

UWAI, K ;

KOBAYASHI, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993, 32 (08) :3363-3369

← 1 →