Correlation between surface morphology and lattice orientation of microcrystalline silicon

被引：8

作者：

Kondo, M ^{[1
]}

Nishimiya, T ^{[1
]}

Saitoh, K ^{[1
]}

Ohe, T ^{[1
]}

Matsuda, A ^{[1
]}

机构：

[1] Electrotech Lab, Thin Film Si Solar Cells Superlab, Ibaraki, Osaka 305, Japan

来源：

AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997 | 1997年 / 467卷

关键词：

D O I：

10.1557/PROC-467-391

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The surface morphology and preferential orientation of mu c-Si:H has been studied on c-Si substrate in relation to the Si-H banding mode. Epitaxy-like growth is observed on Si (001) substrate at a moderate temperature and under low ion bombardment, while the surface is significantly roughened. With increasing or decreasing the temperature or increasing the ion bombardment, the lattice orientation is randomized and an amorphous component is increased, resulting in the reduction of the surface roughness. The growth mode is intimately related to the Si-H bonding configuration. The epitaxy-like growth is collapsed accompanying the disappearance of the surface Si-H-2,H-3 mode. The resemblance of these phenomena to the low temperature MBE is discussed.

引用

页码：391 / 396

页数：6