Aqueous base developable epoxy resist for high sensitivity electron beam lithography

被引：7

作者：

Argitis, P ^{[1
]}

Glezos, N

Vasilopoulou, M

Raptis, I

Hatzakis, M

Everett, J

Meneghini, G

Palumbo, A

Ardito, M

Hudek, P

Kostic, I

机构：

[1] NCSR Demokritos, IMEL, Ag Paraskevi 15310, Greece

[2] Dow Chem Co, Rheinmunster, Germany

[3] CSELT SpA, I-10141 Turin, Italy

[4] Slovak Acad Sci, Inst Informat, SK-84237 Bratislava, Slovakia

来源：

MICROELECTRONIC ENGINEERING | 2000年 / 53卷 / 1-4期

关键词：

D O I：

10.1016/S0167-9317(00)00354-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 [电气工程]; 0809 [电子科学与技术];

摘要：

Aqueous base developable, chemically amplified negative resists, based on epoxy chemistry are introduced and evaluated for high resolution, high speed e-beam lithography. These resists are formulated using partially hydrogenated poly(hydroxy styrene) and epoxy novolac polymers and they do not suffer from thermal instability of unexposed regions during processing. Degree of hydrogenation controls the aqueous base solubility and micro phase separation phenomena. Reduction of edge roughness compared to the pure epoxy systems is observed whereas the absence of swelling phenomena allows lithography up to 100 nm regime.

引用

页码：453 / 456

页数：4

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