Diode-free magnetic random access memory using spin-dependent tunneling effect

被引：14

作者：

Wang, FZ ^{[1
]}

机构：

[1] Univ N London, Sch Informat & Multimedia Technol, London N7 8DB, England

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 13期

关键词：

D O I：

10.1063/1.1313345

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A diode-free magnetic random access memory comprises two sets of conductive lines, an array of magnetic tunnel junctions at each intersection, and a peripheral circuitry. Such a simplified diode-free architecture described in this letter overcomes the diode-area constraint in the prior art and achieves a significant breakthrough in storage density. (C) 2000 American Institute of Physics. [S0003- 6951(00)05039-7].

引用

页码：2036 / 2038

页数：3

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