Submilliamp 1.3μm vertical-cavity surface-emitting lasers with threshold current density of <500A/cm2

被引：21

作者：

Qian, Y

Zhu, ZH

Lo, YH

Huffaker, DL

Deppe, DG

Hou, HQ

Hammons, BE

Lin, W

Tu, YK

机构：

[1] Cornell Univ, Sch Elect Engn, Ithaca, NY 14853 USA

[2] Sandia Natl Labs, Dept Semicond Mat, Albuquerque, NM 87185 USA

[3] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 12期

关键词：

vertical cavity surface emitting lasers; semiconductor junction lasers;

D O I：

10.1049/el:19970679

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High performance 1.3 mu m vertical-cavity surface-emitting lasers (VCSELs) using oxygen implantation in wafer-bonded GaAs/AlGaAs mirrors are demonstrated. A record low threshold current density of 454A/cm(2) and a threshold current of 0.83mA have been achieved for pulsed operation at 20 degrees C. The maximum CW and pulsed operating temperatures are 40 and 112 degrees C, respectively.

引用

页码：1052 / 1054

页数：3

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[4]

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QIAN Y, 1997, OFC 97

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Submilliamp 1.3μm vertical-cavity surface-emitting lasers with threshold current density of &lt;500A/cm2

Submilliamp 1.3μm vertical-cavity surface-emitting lasers with threshold current density of <500A/cm2