Evaluation of DNQ/novolac resists for 130 nm device maskmaking

Several optical resists based on diazonaphthoquinone(DNQ)/novolac chemistry were evaluated for maskmaking application in the 130 nm device generation. Initial screening was performed at 10 kV with additional optimization at 50 kV. To enhance the electron-beam sensitivity, stronger metal ion developers were used. A Shipley i-line resist, SPR700, in conjunction with an optimized process, was found to demonstrate a bulk sensitivity of less than or equal to 20 mu C/cm(2) with a contrast of greater than or equal to 5 at 50 kV. A design of experiment based on three development parameters was used to optimize the lithographic performance. A minimum feature size of 175 nm was resolved with very little corner rounding. This resist demonstrates strong attributes for use in mask technology for the 130 nm device generation.