Defect Formation in Ga-Catalyzed Silicon Nanowires

被引：41

作者：

Conesa-Boj, Sonia ^{[1
]}

Zardo, Ilaria ^{[2
,3
]}

Estrade, Sonia ^{[1
]}

Wei, Li ^{[4
]}

Alet, Pierre Jean ^{[4
]}

Roca i Cabarrocas, Pere ^{[4
]}

Morante, Joan R. ^{[1
,5
]}

Peiro, Francesca ^{[1
]}

Fontcuberta i Morral, Anna ^{[2
,3
,6
]}

Arbiol, Jordi ^{[1
,7
,8
]}

机构：

[1] Univ Barcelona, Dept Elect, E-08028 Barcelona, CAT, Spain

[2] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

[3] Tech Univ Munich, Dept Phys, D-85748 Garching, Germany

[4] Ecole Polytech, CNRS, LPICM, F-91128 Palaiseau, France

[5] Catalonia Inst Energy Res, IREC, Barcelona 08019, Spain

[6] Ecole Polytech Fed Lausanne, Inst Mat, Lab Mat Semicond, CH-1015 Lausanne, Switzerland

[7] CSIC, ICREA, Bellaterra 08193, CAT, Spain

[8] CSIC, Inst Ciencia Mat Barcelona, Bellaterra 08193, CAT, Spain

来源：

CRYSTAL GROWTH & DESIGN | 2010年 / 10卷 / 04期

关键词：

TWINNING SUPERLATTICES; OPTICAL-PROPERTIES; CONTROLLED GROWTH; EPITAXIAL-GROWTH; SINGLE; CRYSTALLINE; SI; HETEROSTRUCTURES;

D O I：

10.1021/cg900741y

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The synthesis of silicon nanowires by Ga-assisted plasma enhanced chemical vapor deposition (PECVD) has been recently demonstrated. In the present work, we study in detail the structural characteristics of the synthesized nanowires. High resolution transmission electron microscopy (HRTEM) analysis reveals the existence of various types of structural defects, which can be classified mainly according to the orientation into axial twins, lateral twins, and transverse twins. We compare our results with previous studies of Si nanowires synthesized with other catalyst metals. Understanding, both the origin and the effects of the observed defects is important for technological applications. The presence of twinned domains changes locally the structure of the material. As a consequence, one should find a different local density of states and band gap, which should result in a variation of the carrier transport and optical properties of the nanowires.

引用

页码：1534 / 1543

页数：10

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