Electronic properties of low-dimensional oxides Te4Mo20O62 and VMoO5

被引：8

作者：

Narushima, K ^{[1
]}

Shiozaki, I ^{[1
]}

机构：

[1] TOKYO METROPOLITAN UNIV,FAC SCI,DEPT PHYS,HACHIOJI,TOKYO 19203,JAPAN

来源：

SOLID STATE COMMUNICATIONS | 1997年 / 101卷 / 02期

关键词：

magnetically ordered materials; semiconductors; crystal growth; electronic transport; phase transition;

D O I：

10.1016/S0038-1098(96)00543-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Crystals of some new low-dimensional compounds, Te4Mo20O62 and VMoO5, have been grown by gas phase transport method. From X-ray analysis the crystal structure of Te4Mo20O62 was determined to be of the intergrowth tungsten bronze type. The crystal of VMoO5 is a monoclinic plate-like structure. Te4Mo20O62 is a semiconductor and the electrical resistivity shows a big two-dimensional anisotropy. It was also found to have a remarkable current dependent non-linear behavior. The magnetic susceptibility of VMoO5 showed a metamagnetic behavior and an antiferromagnetic phase transition below 40K. Copyright (C) 1996 Elsevier Science Ltd

引用

页码：99 / 102

页数：4