Low threshold field electron emission from solvothermally synthesized WO2.72 nanowires

被引：19

作者：

Late, Dattatray J. ^{[2
]}

Kashid, Ranjit V. ^{[1
]}

Rout, Chandra Sekhar ^{[3
]}

More, Mahendra A. ^{[1
]}

Joag, Dilip S. ^{[1
]}

机构：

[1] Univ Pune, Dept Phys, Ctr Adv Studies Mat Sci & Condensed Matter Phys, Pune 411007, Maharashtra, India

[2] Jawaharlal Nehru Ctr Adv Sci Res, Chem & Phys Mat Unit, Bangalore 560064, Karnataka, India

[3] Natl Univ Singapore, Singapore MIT Alliance, Singapore 117548, Singapore

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2010年 / 98卷 / 04期

关键词：

THIN-FILMS; TUNGSTEN; DEPOSITION; ZNO;

D O I：

10.1007/s00339-009-5536-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Field emission studies of WO2.72 nanowires synthesized by a solvothermal method have been performed in the planar diode configuration under ultra high vacuum conditions. Fowler-Nordheim plots obtained from the current-voltage characteristics follow the quantum mechanical tunneling process and a current density of similar to 8.3x10(6) mu A/cm(2) can be drawn at an applied electric field of 2 V/mu m. The field enhancement factor is 33025, while the turn-on field is only 1.4 V/mu m. The emission current-time plot recorded at the pre-set value of emission current of 1 mu A over a period of more than 3 h exhibits an initial increase and a subsequent stabilization of the emission current. The results reveal that the WO2.72 nanowire emitters synthesized by the solvothermal method are promising cathode materials for practical applications.

引用

页码：751 / 756

页数：6

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