MOCVD growth of highly strained InGaAs:Sb-GaAs-GaAsP quantum well vertical cavity surface-emitting lasers with 1.27 μm emission

被引：10

作者：

Kuo, HC

Yao, HH

Chang, YH

Chang, YA

Tsai, MY

Hsieh, J

Chang, EY

Wang, SC

机构：

[1] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 1001, Taiwan

[2] Natl Chiao Tung Univ, Dept Mat Engn, Hsinchu, Taiwan

来源：

JOURNAL OF CRYSTAL GROWTH | 2004年 / 272卷 / 1-4期

关键词：

metalorganic chemical vapor deposition; antimonides; semiconducting indium compounds; optical fiber devices; vertical cavity surface emitting laser;

D O I：

10.1016/j.jcrysgro.2004.08.092

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

1.27mum InGaAs:Sb-GaAs-GaAsP vertical cavity surface-emitting lasers (VCSELs) were grown by metalorganic chemical vapor deposition (MOCVD) with superior performance. The threshold current changes between 1.8 and 1.1 mA and the slope efficiency drops below similar to35% when the temperature is raised from room temperature to 70degreesC. With only 5 mA of bias current, the 3 dB modulation frequency response is measured to be 8.36 GHz which is suitable for 10Gb/s operation. The maximal bandwidth is estimated to 10.7GHz with modulation current efficiency factor MCEF) of similar to5.25GHz/(mA)(1/2). The results of InGaAs:Sb-GaAs-GaAsP VCSELs can reach a performance level comparable to GalnAsN VCSELs with better thermal stability and should be considered as a very promising candidate for 1.3 mum commercial applications. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：538 / 542

页数：5

共 16 条

[11] 1.3 μm InGaAsN vertical cavity surface emitting lasers grown by MOCVD [J].