Intraband dynamics at the semiconductor band edge: Shortcomings of the Bloch equation method

被引:61
作者
Axt, VM
Bartels, G
Stahl, A
机构
[1] Institut für Theoretische Physik B, Rheinisch Westfälische Technische Hochschule Aachen, Aachen, 52056, Sommerfeldstrasse
关键词
D O I
10.1103/PhysRevLett.76.2543
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The validity of the semiconductor Bloch equations (SEE) depends on the approximate decomposition of an intraband correlation function into a product of interband transition densities. We analyze the consequences of this approximation on the intraband dynamics of an optically excited semiconductor. As a special example where the SEE treatment becomes questionable we consider the THz emission of a narrow band superlattice in a static bias field. A comparison of the second order SEE solution with a rigorous second order treatment of this system helps one identify the weak points of the SEE approach and understand the physical background of its failure.
引用
收藏
页码:2543 / 2546
页数:4
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