Verify: Key to the stable single-electron-memory operation

被引：13

作者：

Ishii, T ^{[1
]}

Yano, K ^{[1
]}

Sano, T ^{[1
]}

Mine, T ^{[1
]}

Murai, F ^{[1
]}

Seki, K ^{[1
]}

机构：

[1] Hitachi Cent Res Lab, Tokyo 185, Japan

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650301

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The impact of verify, which has been used in flash memory; however, has not been associated with single-electron memory, is analyzed and experimentally demonstrated. Using verify overcomes many obstacles to large-scale integration, including background charge variation, the inherent stochastic behavior of single-electron dynamics, and nanoscale structure variation, especially in naturally formed nanostructures, such as nano-silicon. A write/erase endurance of 10(7) cycles was demonstrated with nano-Si memory devices.

引用

页码：171 / 174

页数：4