Performance, high voltage operation and radiation hardness of full-size ATLAS charge division silicon detectors with LHC electronics

被引:1
作者
Allport, PP
Booth, PSL
Carter, JR
Goodrick, MJ
Green, C [1 ]
Greenall, A
Hanlon, M
Hill, JC
Jackson, JN
Jones, TJ
Garcia, SMI
Munday, DJ
Murray, W
Richardson, JD
Robinson, D
Sheridan, AE
Smith, NA
Tyndel, M
Wyllie, K
机构
[1] Univ Liverpool, Dept Phys, Oliver Lodge Lab, Liverpool L69 3BX, Merseyside, England
[2] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
[3] Rutherford Appleton Lab, Didcot OX11 0QX, Oxon, England
关键词
D O I
10.1016/S0920-5632(97)00607-5
中图分类号
O412 [相对论、场论]; O572.2 [粒子物理学];
学科分类号
摘要
ATLAS silicon detectors designed for charge division read-out were produced during 1995 and have been extensively studied both in the laboratory and test beam at the CERN SPS. Data have been taken with the analogue read-out FELIX-128 chip and studies simulating other read-out architectures under consideration by ATLAS have been performed. To evaluate survival in the harsh environment of the LHC, detectors have been tested to high voltage, both before and after radiation damage by protons exceeding the expected charged hadron dose after 10 years of LHC operation. These tests have all employed analogue read-out to be sensitive to changes in noise and charge collection efficiency as a function of the detector damage.
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页码:487 / 492
页数:6
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