Enhanced deposition rate of dc reactively sputtered TiO2 films by means of low-frequency modulation of the discharge current

Titanium dioxide films were deposited by d.c. or pulsed d.c. reactive magnetron sputtering in argon-oxygen gaseous mixtures. The factors which favour the nucleation of the rutile TiO2 structure are briefly reviewed, in particular those which increase the energy of the particles impinging on the growing film. However, the main purpose of the present study is to show how it is possible to enhance the deposition rate of reactively sputtered TiO2 films by low-frequency modulation of the average current discharge, thus allowing dynamic control of target poisoning by the reactive gas which would otherwise inhibit sputtering. (C) 1997 Elsevier Science S.A.