Inelastic electron tunneling via molecular vibrations in single-molecule transistors

被引:288
作者
Yu, LH
Keane, ZK
Ciszek, JW
Cheng, L
Stewart, MP
Tour, JM
Natelson, D
机构
[1] Rice Univ, Dept Phys & Astron, Houston, TX 77005 USA
[2] Rice Univ, Dept Chem, Houston, TX 77005 USA
[3] Rice Univ, Ctr Nanoscale Sci & Technol, Houston, TX 77005 USA
[4] Rice Univ, Dept Elect & Comp Engn, Houston, TX 77005 USA
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRevLett.93.266802
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In single-molecule transistors, we observe inelastic cotunneling features that correspond energetically to vibrational excitations of the molecule, as determined by Raman and infrared spectroscopy. This is a form of inelastic electron tunneling spectroscopy of single molecules, with the transistor geometry allowing in situ tuning of the electronic states via a gate electrode. The vibrational features shift and change shape as the electronic levels are tuned near resonance, indicating significant modification of the vibrational states. When the molecule contains an unpaired electron, we also observe vibrational satellite features around the Kondo resonance.
引用
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页数:4
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