Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes

被引：53

作者：

Chang, SJ ^{[1
]}

Chen, CH

Su, YK

Sheu, JK

Lai, WC

Tsai, JM

Liu, CH

Chen, SC

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[3] Cheng Shiu Inst Technol, Dept Elect Engn, Kaohsiung 830, Taiwan

[4] Natl Cent Univ, Dept Phys, Chungli 320, Taiwan

[5] S Epitaxy Corp, Hsin Shi 744, Taiwan

[6] Nan Jeon Jr Coll Technol & Commerce, Dept Elect Engn, Yenshui 737, Taiwan

[7] Natl Yunlin Univ Sci & Technol, Dept Elect Engn, Touliu 640, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 03期

关键词：

electrostatic discharge (ESD); GaN; LED; Schottky diode;

D O I：

10.1109/LED.2003.809043

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaN Schottky diodes were built internally inside the GaN green LEDs by using etching and redeposition techniques. By properly selecting the etching areas underneath the bonding pads, one can minimize the optical loss due to the etching process. Although the reverse current and the forward turn-on voltage were both higher for the GaN LED with a Schottky diode, it was found that the internal Schottky diode could significantly increase the electrostatic discharge threshold from 450 to 1300 V.

引用

页码：129 / 131

页数：3

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