Grain-boundary effects on magnetotransport in La0.7Sr0.3MnO3 biepitaxial films

被引:32
作者
Mathieu, R
Svedlindh, P
Chakalov, RA
Ivanov, ZG
机构
[1] Uppsala Univ, Dept Mat Sci, SE-75121 Uppsala, Sweden
[2] Chalmers Univ Technol, Dept Phys, SE-41296 Gothenburg, Sweden
来源
PHYSICAL REVIEW B | 2000年 / 62卷 / 05期
关键词
D O I
10.1103/PhysRevB.62.3333
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The low field magnetotransport of La0.7Sr0.3MnO3 (LSMO) films grown pn SrTiO3 substrates has been investigated. A high quality LSMO film exhibits anisotropic magnetoresistance (AMR) and a peak in the magnetoresistance close to the Curie temperature of LSMO. Biepitaxial films prepared using a seed layer of MgO and a buffer layer of CeO2 display a resistance dominated by grain boundaries. One film was prepared with seed and buffer layers intact, while a second sample was prepared as a 2D square array of grain boundaries. These films exhibit (i) a low temperature tail in the low field magnetoresistance, (ii) a magnetoconductance with a constant high field slope, and (iii) a comparably large AMR effect. A model based on a two-step tunneling process, including spin-flip tunneling, is discussed and shown to be consistent with the experimental findings of the biepitaxial films.
引用
收藏
页码:3333 / 3339
页数:7
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