Enhanced dielectric properties of (Ba,Sr)TiO3 thin tilms applicable to tunable microwave devices

被引：12

作者：

Park, BH ^{[1
]}

Jia, QX

机构：

[1] Konkuk Univ, Dept Phys, Seoul 143701, South Korea

[2] Los Alamos Natl Lab, Superconductor Technol Ctr, Los Alamos, NM 87545 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2002年 / 41卷 / 11B期

关键词：

Ba0.6Sr0.4TiO3; microstructure; strain states; TiO2-doped; dielectric properties;

D O I：

10.1143/JJAP.41.7222

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have heteroepitaxially deposited pure and TiO2-doped Ba0.6Sr0.4TiO3(BST-0.4) films on (001)-oriented MgO substrates using pulsed-laser deposition. By optimizing microstructures, we have successfully increased the dielectric nonlinearity and decreased the dielectric loss of BST films. By inserting a very thin Ba1-xSrxTiO3 (X = 0.1-0.7) interlayer between the MgO substrate and the main layer of BST-0.4, we are able to manipulate strain states and dielectric properties of BST-0.4 films. In addition, we have systematically compared the dielectric properties of pure and TiO2-doped BST-0.4 films.

引用

收藏

页码：7222 / 7225

页数：4

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