Functional ITO coatings on glasses by RF plasma mist technique in ambient atmosphere

被引:3
作者
Moss, RW
Lee, DH
Vuong, KD
Condrate, RA
Wang, XW
DeMarco, M
Stuckey, J
机构
[1] ALFRED UNIV, ALFRED, NY 14802 USA
[2] SUNY COLL BUFFALO, BUFFALO, NY 14222 USA
[3] ARGONNE NATL LAB, ARGONNE, IL 60439 USA
关键词
D O I
10.1016/S0022-3093(97)00161-0
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Recently, we developed an RF plasma mist deposition technique in ambient atmosphere. Indium tin oxide films have been coated on soda-lime-silicate and fused silica glass substrates, at deposition temperatures ranging from 400 to 750 degrees C. As-deposited films are uniform and homogeneous as revealed by scanning electron microscopy, atomic force microscopy and energy dispersive spectroscopy. X-ray diffraction indicated that either indium oxide (In2O3) or tin oxide (SnO2) is formed depending on the indium-to-tin ratio (In:Sn). Average sizes of crystallites in the films are between 6 and 35 nm. Furthermore, as-deposited films are nearly 100% transparent in the visible range and the maximum conductivity occurs near In:Sn ratio of 9.1. Other material properties, such as the optical absorption edge and lattice parameters are also dependent on the In:Sn ratio. (C) 1997 Published by Elsevier Science B.V.
引用
收藏
页码:105 / 112
页数:8
相关论文
共 15 条
[1]   ELECTRICAL-CONDUCTION IN A TIN-OXIDE-SILICON INTERFACE PREPARED BY SPRAY PYROLYSIS [J].
CHAUDHURI, UR ;
RAMKUMAR, K ;
SATYAM, M .
JOURNAL OF APPLIED PHYSICS, 1989, 66 (04) :1748-1752
[2]   OPTICAL-PROPERTIES OF SPRAY-DEPOSITED TIN OXIDE-FILMS [J].
DEMIRYONT, H ;
NIETERING, KE ;
SUROWIEC, R ;
BROWN, FI ;
PLATTS, DR .
APPLIED OPTICS, 1987, 26 (18) :3803-3810
[3]  
FURSAKI T, 1991, HIGH PERFORMANCE CER
[4]   USAGE OF ITO TO PREVENT SPACECRAFT CHARGING [J].
GOLDSTEIN, RD ;
BROWN, EM ;
MALDOON, LC .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) :1621-1628
[5]   BAND-GAP NARROWING IN TIN-DOPED INDIUM OXIDE-FILMS [J].
GUPTA, L ;
MANSINGH, A ;
SRIVASTAVA, PK .
APPLIED SURFACE SCIENCE, 1988, 33-4 :898-904
[6]  
HOWARD SA, 1990, SYSTEM XRAY POWDER D
[7]  
JARZEBSKI ZM, 1976, J ELECTROCHEM SOC, V123, pC199, DOI [10.1149/1.2133090, 10.1149/1.2132647]
[8]   ELECTRONIC CONDUCTION OF TIN OXIDE THIN-FILMS PREPARED BY CHEMICAL VAPOR-DEPOSITION [J].
KOJIMA, M ;
KATO, H ;
IMAI, A ;
YOSHIDA, A .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (04) :1902-1905
[9]   RF aerosol plasma fabrication of indium tin oxide and tin oxide thin films [J].
Lee, DH ;
Vuong, KD ;
Williams, JAA ;
Fagan, J ;
Condrate, RA ;
Wang, XW .
JOURNAL OF MATERIALS RESEARCH, 1996, 11 (04) :895-903
[10]   THIN METALLIC OXIDES AS TRANSPARENT CONDUCTORS [J].
MANIFACIER, JC .
THIN SOLID FILMS, 1982, 90 (03) :297-308