Tungsten Oxide Resistive Memory Using Rapid Thermal Oxidation of Tungsten Plugs

被引：20

作者：

Lai, Erh-Kun ^{[1
,2
]}

Chien, Wei-Chih ^{[1
,3
]}

Chen, Yi-Chou ^{[1
]}

Hong, Tian-Jue ^{[1
]}

Lin, Yu-Yu ^{[1
]}

Chang, Kuo-Pin ^{[1
]}

Yao, Yeong-Der ^{[4
,5
]}

Lin, Pang ^{[3
]}

Horng, Sheng-Fu ^{[2
]}

Gong, Jeng ^{[2
]}

Tsai, Shih-Chang ^{[1
]}

Lee, Ching-Hsiung ^{[1
]}

Hsieh, Sheng-Hui ^{[1
]}

Chen, Chun-Fu ^{[1
]}

Shih, Yen-Hao ^{[1
]}

Hsieh, Kuang-Yeu ^{[1
]}

Liu, Rich ^{[1
]}

Lu, Chih-Yuan ^{[1
]}

机构：

[1] Macronix Int Co Ltd, Hsinchu 300, Taiwan

[2] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 300, Taiwan

[3] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

[4] Fu Jen Catholic Univ, Dept Phys, Taipei 242, Taiwan

[5] Fu Jen Catholic Univ, Inst Appl Sci & Engn, Taipei 242, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 04期

关键词：

Metals - Rapid thermal annealing - Tungsten compounds - Nonvolatile storage - Thermooxidation - MOS devices - Rapid thermal processing - CMOS integrated circuits;

D O I：

10.1143/JJAP.49.04DD17

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A complementary metal oxide semiconductor (CMOS)-compatible WOx based resistive memory has been developed. The WOx memory layer is made from rapid thermal oxidation of W plugs. The device performs excellent electrical properties. The switching speed is extremely fast (similar to 2 ns) and the programming voltage (< 1: 4 V) is low. For single-level cell (SLC) operation, the device shows a large resistance window, and 10(8)-cycle endurance. For multi-level cell (MLC) operation, it demonstrates 2-bit/cell storage with the endurance up to 10000 times. The rapid thermal oxidation (RTO) WOx resistance random access memory (RRAM) is very promising for both high-density and embedded memory applications. (C) 2010 The Japan Society of Applied Physics

引用

页数：4

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