Low dark current pin ultraviolet photodetectors fabricated on GaN grown by metal organic chemical vapour deposition

被引：28

作者：

Carrano, JC ^{[1
]}

Li, T ^{[1
]}

Grudowski, PA ^{[1
]}

Eiting, CJ ^{[1
]}

Lambert, D ^{[1
]}

Schaub, JD ^{[1
]}

Dupuis, RD ^{[1
]}

Campbell, JC ^{[1
]}

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 07期

关键词：

D O I：

10.1049/el:19980453

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report GaN pin photodetectors with very low dark currents (<10pA at -10V), and with external quantum efficiencies (similar to 35%). These photodetectors have a flat responsivity above the bandgap (measured at similar to 0.10 A/W) with a sharp, solar-blind cutoff at the band edge.

引用

页码：692 / 694

页数：3

共 4 条

[1]

Dmitriev VA, 1996, APPL PHYS LETT, V68, P229, DOI 10.1063/1.116469

[2] Low noise p-pi-n GaN ultraviolet photodetectors [J].

Osinsky, A ;

Gangopadhyay, S ;

Gaska, R ;

Williams, B ;

Khan, MA ;

Kuksenkov, D ;

Temkin, H .

APPLIED PHYSICS LETTERS, 1997, 71 (16) :2334-2336

[3] Ultraviolet-sensitive, visible-blind GaN photodiodes fabricated by molecular beam epitaxy [J].

VanHove, JM ;

Hickman, R ;

Klaassen, JJ ;

Chow, PP ;

Ruden, PP .

APPLIED PHYSICS LETTERS, 1997, 70 (17) :2282-2284

[4] High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n) structures [J].

Xu, GY ;

Salvador, A ;

Kim, W ;

Fan, Z ;

Lu, C ;

Tang, H ;

Morkoc, H ;

Smith, G ;

Estes, M ;

Goldenberg, B ;

Yang, W ;

Krishnankutty, S .

APPLIED PHYSICS LETTERS, 1997, 71 (15) :2154-2156

← 1 →