Grain boundary defect chemistry of acceptor-doped titanates: High field effects

被引:48
作者
Vollmann, M [1 ]
Waser, R [1 ]
机构
[1] Rhein Westfal TH Aachen, Inst Werkstoffe Elektrotech, D-52056 Aachen, Germany
关键词
grain boundaries; space charge; impedance spectroscopy; acceptor; titanate;
D O I
10.1023/A:1009998331688
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The field enhanced average conductivity in grain boundary space charge depletion layers in acceptor-doped SrTiO3 ceramics was investigated by impedance analysis in the time domain. The dependence of the grain boundary conductivity on the acceptor concentration, the temperature and the field dependence are discussed and interpreted in terms of a Schottky diffusion model combined with the influence of accumulated oxygen vacancies at the GB interface.
引用
收藏
页码:51 / 64
页数:14
相关论文
共 19 条
[1]   KINETICS OF OXYGEN INCORPORATION IN SRTIO3 (FE-DOPED) - AN OPTICAL INVESTIGATION [J].
BIEGER, T ;
MAIER, J ;
WASER, R .
SENSORS AND ACTUATORS B-CHEMICAL, 1992, 7 (1-3) :763-768
[2]   GRAIN-BOUNDARY CHEMISTRY OF BARIUM-TITANATE AND STRONTIUM-TITANATE .1. HIGH-TEMPERATURE EQUILIBRIUM SPACE-CHARGE [J].
CHIANG, YM ;
TAKAGI, T .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1990, 73 (11) :3278-3285
[3]   Partial conductivities in SrTiO3: Bulk polarization experiments, oxygen concentration cell measurements, and defect-chemical modeling [J].
Denk, I ;
Munch, W ;
Maier, J .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1995, 78 (12) :3265-3272
[4]  
Greuter F., 1989, ADV VARISTOR TECHNOL, V3, P31
[5]   REVERSIBLE WEIGHT CHANGE OF ACCEPTOR-DOPED BATIO3 [J].
HAGEMANN, HJ ;
HENNINGS, D .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1981, 64 (10) :590-594
[6]  
HAGENBECK R, IN PRESS COMMUNICATI
[7]  
Ihrig H., 1976, Journal of Physics C (Solid State Physics), V9, P3469, DOI 10.1088/0022-3719/9/18/013
[8]   MASS-TRANSPORT IN THE PRESENCE OF INTERNAL DEFECT REACTIONS - CONCEPT OF CONSERVATIVE ENSEMBLES .3. TRAPPING EFFECT OF DOPANTS ON CHEMICAL DIFFUSION [J].
MAIER, J .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1993, 76 (05) :1223-1227
[9]  
Neumann H., 1986, Ferroelectrics, V69, P179, DOI 10.1080/00150198608008191
[10]   DC VOLTAGE DEPENDENCE OF SEMICONDUCTOR GRAIN-BOUNDARY RESISTANCE [J].
PIKE, GE ;
SEAGER, CH .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3414-3422