Enhancement of hole injection using O2 plasma-treated Ag anode for top-emitting organic light-emitting diodes -: art. no. 012104

被引：83

作者：

Choi, HW ^{[1
]}

Kim, SY

Kim, KB

Tak, YH

Lee, JL

机构：

[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, Kyungbuk, South Korea

[2] LG Elect Inc, Kumi 730030, Kyungbuk, South Korea

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 01期

关键词：

D O I：

10.1063/1.1846149

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the enhancement of hole injection using AgOx layer between Ag anode and 4,4(')-bis[N-(1-naphtyl)-N-phenyl-amino]biphenyl in top-emitting organic light-emitting diode (OLED). The turn-on voltage of OLEDs decreased from 17 to 7 V as Ag changed to AgOx by the surface treatment using O-2 plasma. Synchrotron radiation photoelectron spectroscopy results showed that the work function increased about 0.4 eV by the O-2 plasma treatment. This led to the decrease of the energy barrier for hole injection, reducing the turn-on voltage of OLEDs. (C) 2005 American Institute of Physics.

引用

页码：012104 / 1

页数：3

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