Alternating layer and island growth of Pb on Si by spontaneous quantum phase separation

被引：83

作者：

Hong, HW

Wei, CM

Chou, MY

Wu, Z

Basile, L

Chen, H

Holt, M

Chiang, TC

机构：

[1] Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA

[2] Acad Sinica, Inst Phys, Taipei 11529, Taiwan

[3] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

[4] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA

[5] Univ Illinois, Dept Phys, Urbana, IL 61801 USA

[6] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 90卷 / 07期

关键词：

D O I：

10.1103/PhysRevLett.90.076104

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Real-time in situ x-ray studies of continuous Pb deposition on Si(111)-(7x7) at 180 K reveal an unusual growth behavior. A wetting layer forms first to cover the entire surface. Then islands of a fairly uniform height of about five monolayers form on top of the wetting layer and grow to fill the surface. The growth then switches to a layer-by-layer mode upon further deposition. This behavior of alternating layer and island growth can be attributed to spontaneous quantum phase separation based on a first-principles calculation of the system energy.

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页数：4

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