A low phase noise monolithic VCO in SiGeBiCMOS

被引：32

作者：

Mourant, JM ^{[1
]}

Imbornone, J ^{[1
]}

Tewksbury, T ^{[1
]}

机构：

[1] IBM Corp, Lowell, MA USA

来源：

2000 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2000年

关键词：

D O I：

10.1109/RFIC.2000.854418

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fully integrated, low phase noise, dual-band voltage controlled oscillator (VCO) utilizing a novel tuning scheme is reported, Coarse digital tuning is achieved using MOSFETs and fine analog tuning utilizes PN varactors, The measured phase noise is -95dBc/Hz max at 3GHz +25kHz over the whole tuning bandwidth (+/-12.5%), and the power dissipated is 22.5mW To our knowledge, these are the best results published so far.

引用

页码：65 / 68

页数：4