Electronic properties of single-walled V2O5 nanotubes

被引：38

作者：

Ivanovskaya, VV

Enyashin, AN

Sofronov, AA

Makurin, YN

Medvedeva, NI

Ivanovskii, AL

机构：

[1] Russian Acad Sci, Ural Branch, Inst Solid State Chem, Ekaterinburg 620219, Russia

[2] Ural State Tech Univ, Ekaterinburg 620001, Russia

来源：

SOLID STATE COMMUNICATIONS | 2003年 / 126卷 / 09期

关键词：

vanadium pentoxide nanotubes; electronic band structure; VANADIUM-OXIDE NANOTUBES; WS2; NANOTUBES; CRYSTALLINE;

D O I：

10.1016/S0038-1098(03)00254-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Atomistic models of quasi-one-dimensional vanadium pentoxide nanostructures-single-walled nanotubes formed by rolling (010) layers Of V2O5 are constructed and their electronic properties and bond indices are studied using the tight-binding band method. We show that all zigzag (n,0)- and armchair (n, n)-like nanotubes are uniformly semiconducting, and the band gap trends to vanish as the tube diameters decrease. The V-O covalent bonds were found to be the strongest interactions in V2O5 tubes, whereas V-V bonds proved to be much weaker. (C) 2003 Elsevier Science Ltd. All rights reserved.

引用

页码：489 / 493

页数：5

共 35 条

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