Magnetically induced field effect in carbon nanotube devices

被引：40

作者：

Fedorov, Georgy ^{[1
]}

Tselev, Alexander

Jimenez, David

Latil, Sylvain

Kalugin, Nikolai G.

Barbara, Paola

Smirnov, Dmitry

Roche, Stephan

机构：

[1] Natl High Magnet Field Lab, Tallahassee, FL 32310 USA

[2] Georgetown Univ, Dept Phys, Washington, DC 20057 USA

[3] Univ Autonoma Barcelona, Escola Tecn Super Engn, Dept Elect Engn, E-08193 Barcelona, Spain

[4] Fac Univ Notre Dame Paix, Dept Phys, B-5000 Namur, Belgium

[5] New Mexico Inst Min & Technol, Dept Chem, Socorro, NM 87801 USA

[6] CEA, DSM, DRFMC, SPSMS,GT, F-38054 Grenoble, France

来源：

NANO LETTERS | 2007年 / 7卷 / 04期

关键词：

D O I：

10.1021/nl063029v

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Three-terminal devices with conduction channels formed by quasi-metallic carbon nanotubes (CNTs) are shown to operate as nanotube-based field-effect transistors under strong magnetic fields. The off-state conductance of the devices varies exponentially with the magnetic flux intensity. We extract the quasi-metallic CNT chirality as well as the characteristics of the Schottky barriers formed at the metal-nanotube contacts from the temperature-dependent magnetoconductance measurements.

引用

页码：960 / 964

页数：5

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