4-ps passively mode-locked Nd:Gd0.5Y0.5VO4 laser with a semiconductor saturable-absorber mirror

被引：115

作者：

He, JL ^{[1
]}

Fan, YX

Du, J

Wang, YG

Liu, S

Wang, HT

Zhang, LH

Hang, Y

机构：

[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

[2] Shandong Normal Univ, Dept Phys, Jinan 250014, Peoples R China

[3] Chinese Acad Sci, Inst Semicond, Beijing 100022, Peoples R China

[4] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China

来源：

OPTICS LETTERS | 2004年 / 29卷 / 23期

关键词：

D O I：

10.1364/OL.29.002803

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We have demonstrated a passively mode-locked diode end-pumped all-solid-state laser, which is composed of a Nd:Gd0.5Y0.5VO4 crystal and a folded cavity with a semiconductor saturable-absorber mirror grown by metal-organic chemical-vapor deposition. Stable cw mode locking with a 3.8-ps pulse duration at a repetition rate of 112 MHz was obtained. At 13.6 W of the incident pump power, a clean mode-locked fundamental-mode average output power of 3.9 W was achieved with an overall optical-to-optical efficiency of 29.0%, and the slope efficiency was 38.1%. (C) 2004 Optical Society of America.

引用

页码：2803 / 2805

页数：3

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