A high stability electrode technology for stacked SrBi2Ta2O9 capacitors applicable to advanced ferroelectric memory

被引:13
作者
Kudo, J [1 ]
Ito, Y [1 ]
Mitarai, S [1 ]
Ogata, N [1 ]
Yamazaki, S [1 ]
Urashima, H [1 ]
Okutoh, A [1 ]
Nagata, M [1 ]
Ishihara, K [1 ]
机构
[1] Sharp Corp, Corp Res & Dev Grp, Funct Devices Labs, Nara 632, Japan
来源
INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年
关键词
D O I
10.1109/IEDM.1997.650458
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A novel high stability electrode technology with TaSiN as a key ingredient is proposed. Combining it with the reduced pressure annealing for low temperature formation of the SET film, fabrication of the stacked SBT capacitor on poly Si plug was demonstrated for the first time.
引用
收藏
页码:609 / 612
页数:4
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