1/f noise in carbon nanotube devices - On the impact of contacts and device geometry

被引:33
作者
Appenzeller, Joerg
Lin, Yu-Ming
Knoch, Joachim
Chen, Zhihong
Avouris, Phaedon
机构
[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
[2] Forschungszentrum Julich, Inst Thin Film & Interfaces, D-52425 Julich, Germany
关键词
carbon nanotube; field-effect transistor; 1/f noise;
D O I
10.1109/TNANO.2007.892052
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report on the 1/f noise in various ballistic carbon nanotube devices. A common means to characterize the quality of a transistor in terms of noise is to evaluate the ratio of the noise amplitude A and the sample resistance R. By contacting semiconducting tubes with different metal electrodes we are able to show that a small A/R value by itself is no indication of a suitable metal/tube combination for logic applications. We discuss how current in a nanotube transistor is determined by the injection of carriers at the electrode/nanotube interface, while at the same time excess noise is related to the number of carriers inside the nanotube channel. In addition, we demonstrate a substantial reduction in noise amplitude for a tube transistor with multiple carbon nanotubes in parallel.
引用
收藏
页码:368 / 373
页数:6
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