Optoelectronic properties of CdO/Si photodetectors

被引：116

作者：

Ortega, M

Santana, G

Morales-Acevedo, A

机构：

[1] IPN, CINVESTAV, Dept Ingn Elect, Mexico City 07360, DF, Mexico

[2] Univ La Habana, IMRE, Fac Fis, La Habana 43100, Cuba

来源：

SOLID-STATE ELECTRONICS | 2000年 / 44卷 / 10期

关键词：

D O I：

10.1016/S0038-1101(00)00123-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

CdO/Si heterojunctions were fabricated by depositing CdO polycrystalline thin films on p-type single crystalline silicon wafers by CBD. The current-voltage characteristics under dark and illumination of CdO/Si devices resemble those of a light sensitive diode. From the CdO/Si diode spectral sensitivity curves (A/W), it has been implied that CdO films allow a high sensitivity response in the visible and the near infrared regions. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：1765 / 1769

页数：5