Recent progress in amorphous silicon alloy leading to 13% stable cell efficiency

被引：34

作者：

Yang, J ^{[1
]}

Banerjee, A ^{[1
]}

Glatfelter, T ^{[1
]}

Sugiyama, S ^{[1
]}

Guha, S ^{[1
]}

机构：

[1] United Solar Syst Corp, Troy, MI 48084 USA

来源：

CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997 | 1997年

关键词：

D O I：

10.1109/PVSC.1997.654153

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Significant progress has recently been made in amorphous silicon (a-Si) alloy solar cells using a spectral-splitting, triple-junction structure in which the bandgap of each component cell is designed to absorb a different portion of the solar spectrum. Key factors leading to the stable 13% active-area cell efficiency include: i) using a high hydrogen dilution technique during the growth of the intrinsic layers, ii) employing a bandgap profiling design for the a-SiGe alloy cells, iii) incorporating appropriate current mismatch for component cells, iv) developing microcrystalline doped layers for the tunnel junctions and the window layer, v) enhancing the light trapping effect of the textured back reflector, and vi) improving the performance of the top conducting oxide layer. These factors along with other recent developments relevant to the achievement of high efficiency cells will be discussed.

引用

页码：563 / 568

页数：6