Fabrication of flat end mirror etched by focused ion beam for GaN-based blue-green laser diode

被引：15

作者：

Ito, T

Ishikawa, H

Egawa, T

Jimbo, T

Umeno, M

机构：

[1] Nagoya Univ, Dept Elect & Comp Engn, Showa Ku, Nagoya, Aichi 466, Japan

[2] Nagoya Inst Technol, Res Ctr Microstruct Devices, Showa Ku, Nagoya, Aichi 466, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 12B期

关键词：

focused ion beam etching; end mirror; GaN-based blue-green laser diode; root mean square surface roughness; atomic force microscopy; metalorganic chemical vapor deposition; reactive ion etching;

D O I：

10.1143/JJAP.36.7710

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Heteroepitaxial GaN film was deposited on sapphire by metalorganic chemical vapor deposition. mirror for the GaN-based blue-green laser diode was prepared using focused ion beam (FIB) etching. The tilt angle normal to the GaN layer was shown to be less than 1 degrees by scanning loll microscopy. The root mean square surface roughness was 11 Angstrom as observed by atomic force microscopy. The data indicates that FIB is a powerful technique for the fabrication of GaN-based blue-green laser diodes.

引用

页码：7710 / 7711

页数：2

共 6 条

[1]

KURAMATA A, 1996, APPL PHYS LETT, V65, P936

[2]

MOHAMMAD SN, 1995, P IEEE, V83, P1305

[3] HIGH-QUALITY FOCUSED-ION-BEAM-MADE MIRRORS FOR INGAP/INGAAIP VISIBLE-LASER DIODES [J].