Properties of CdSxTe1-x alloy films

被引：1

作者：

Fischer, A ^{[1
]}

Deng, X ^{[1
]}

Grecu, D ^{[1
]}

Makhratchev, K ^{[1
]}

Ma, X ^{[1
]}

Wendt, R ^{[1
]}

Zuo, D ^{[1
]}

Compaan, AD ^{[1
]}

Bohn, RG ^{[1
]}

机构：

[1] Univ Toledo, Dept Phys & Astron, Toledo, OH 43606 USA

来源：

CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997 | 1997年

关键词：

D O I：

10.1109/PVSC.1997.654124

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We have performed a comprehensive study of the electrical, optical, structural, and vibrational properties of thin films of the ternary alloy CdSxTe1-x. The films were grown using pulsed laser deposition (PLD) from pressed targets of the binary alloys. Hall and conductivity measurements have been performed on these films yielding resistivities from 0.5 Omega-cm for CdS-rich films to 1000 M Omega-cm for CdTe-rich films. X-ray diffraction indicates the films are zincblende below x similar to 0.48 and wurtzite above. Raman scattering shows that the phonon dynamics have two-mode behavior. The x-dependence of the Raman data is described well by a modified random element iso-displacement model. Photoluminescence (PL) is particularly useful in the regions of low and high x-values. These data provide an improved basis for characterizing the interdiffusion between CdS and CdTe which is critical to high performance in the CdS/CdTe solar cell. Examples of PL from interdiffused layers are given to illustrate applications.

引用

页码：447 / 450

页数：4