Influence of surface acceptor-donor couples on conductivity and other electrochemical properties of nonstoichiometric NiO at 200°C

被引:28
作者
Palombari, R [1 ]
机构
[1] Univ Perugia, Dipartimento Chim, I-06123 Perugia, Italy
来源
JOURNAL OF ELECTROANALYTICAL CHEMISTRY | 2003年 / 546卷
关键词
NiO semiconductor; conductance sensor; electrochemical sensor;
D O I
10.1016/S0022-0728(03)00134-7
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Nonstoichiometric nickel oxide, a p-type semiconductor, was tested at 200degreesC as an electrode material for proton conductor-based sensors. When measured in air, its potential was found to be dependent on variable concentrations of oxidisable gaseous species, and conversely, at fixed concentrations of the latter compounds the potential was dependent on the pressure of the oxygen. The potential variations, due to changes in surface hole concentrations, induced us to measure the conductivity of the oxide under the same conditions, i.e. in the presence of a donor-acceptor couple. The results obtained were in agreement with the previous observations. A kinetic model for steady state surface hole concentration is proposed to explain the above electrochemical properties. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:23 / 28
页数:6
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