Electrical properties of nanocrystalline anatase TiO2 thin films with different crystallite size

被引:37
作者
Huber, B [1 ]
Gnaser, H [1 ]
Ziegler, C [1 ]
机构
[1] Univ Kaiserslautern, Fachbereich Phys, D-37663 Kaiserslautern, Germany
关键词
titanium oxide; polycrystalline thin films; oxygen; electrical transport (conductivity; resistivity; mobility; etc.);
D O I
10.1016/j.susc.2004.05.081
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Nanocrystalline anatase TiO2 films with crystallites of three different sizes (approximately 6, 12, and 18 nm) were deposited on various substrates (glass, sapphire, and silicon) using colloidal suspensions. These films were thoroughly characterized with respect to their surface morphology, crystal structure, phase homogeneity, elemental composition, and the presence of impurities. A detailed study of the influence of sample temperature T and the ambient oxygen pressure p(O-2) on the electrical conductivity a of the films was performed. For all films a power-law dependence of a on p(O-2), sigma proportional to p(O-2)(n), was observed. The values of the exponent n were found to exhibit a distinct dependence both on the crystallite size and on the specimen temperature; furthermore, an influence due to the presence of doping species was noted. For nanocrystalline films on sapphire substrates and for T = 200degreesC, n amounts to -1.31, -1.15 and -0.56 for the 6-, 12-, and 18-nm films, respectively. For reduced films, an exponential dependence of sigma on T-1 was determined, yielding activation energies E-A with values of 0.34, 0.38, and 0.51 eV for films with those crystallite sizes. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:419 / 424
页数:6
相关论文
共 16 条
[1]  
[Anonymous], 1983, NONSTOICHIOMETRY DIF
[2]   Trap-limited electronic transport in assemblies of nanometer-size TiO2 particles [J].
de Jongh, PE ;
Vanmaekelbergh, D .
PHYSICAL REVIEW LETTERS, 1996, 77 (16) :3427-3430
[3]   Temperature- and oxygen partial pressure-dependent electrical conductivity in nanoporous rutile and anatase [J].
Dittrich, T ;
Weidmann, J ;
Koch, F ;
Uhlendorf, I ;
Lauermann, I .
APPLIED PHYSICS LETTERS, 1999, 75 (25) :3980-3982
[4]  
Gnaser H., 2004, Encycl. Nanosci. Nanotechnol, V6, P505
[5]   SURFACE-DEFECTS OF TIO2(110) - A COMBINED XPS, XAES AND ELS STUDY [J].
GOPEL, W ;
ANDERSON, JA ;
FRANKEL, D ;
JAEHNIG, M ;
PHILLIPS, K ;
SCHAFER, JA ;
ROCKER, G .
SURFACE SCIENCE, 1984, 139 (2-3) :333-346
[6]   INTRINSIC DEFECTS OF TIO2(110) - INTERACTION WITH CHEMISORBED O2, H-2, CO, AND CO2 [J].
GOPEL, W ;
ROCKER, G ;
FEIERABEND, R .
PHYSICAL REVIEW B, 1983, 28 (06) :3427-3438
[7]  
GOPEL W, 1996, SENSORS UPDATE, V47
[8]   Photoelectrochemical cells [J].
Grätzel, M .
NATURE, 2001, 414 (6861) :338-344
[9]  
Hofler H. J., 1991, Diffusion and Defect Data - Solid State Data, Part A (Defect and Diffusion Forum), V75, P195
[10]   DIFFUSION AND POINT-DEFECTS IN TIO2-X [J].
HOSHINO, K ;
PETERSON, NL ;
WILEY, CL .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1985, 46 (12) :1397-1411