Electrical activity at grain boundaries of Cu(In,Ga)Se2 thin films -: art. no. 033306

被引：62

作者：

Marrón, DF ^{[1
]}

Sadewasser, S ^{[1
]}

Meeder, A ^{[1
]}

Glatzel, T ^{[1
]}

Lux-Steiner, MC ^{[1
]}

机构：

[1] Hahn Meitner Inst Berlin GmbH, Dept Solar Energy, D-14109 Berlin, Germany

来源：

PHYSICAL REVIEW B | 2005年 / 71卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.71.033306

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

There is a renewed interest in the electrical activity at grain boundaries in relation to the outstanding performance of thin film solar cells based on Cu(In,Ga)Se-2. We observed electrical activity at grain boundaries in CuGaSe2 thin films by locally resolved work function measurements, using Kelvin probe force microscopy in ultrahigh vacuum on in situ prepared surfaces. By means of their electrical activity under illumination, we identify different types of grain boundaries, presumably associated with different crystallite orientations. A comprehensive discussion of the applicability of different models is presented.

引用

页数：4

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