Lateral oxidation of InAlAs in InP-based heterostructures for long wavelength vertical cavity surface emitting laser applications

被引：35

作者：

Gebretsadik, H ^{[1
]}

Kamath, K

Zhou, WD

Bhattacharya, P

Caneau, C

Bhat, R

机构：

[1] Univ Michigan, Solid State Elect Lab, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

[2] BELLCORE, Red Bank, NJ 07701 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 02期

关键词：

D O I：

10.1063/1.121443

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the wet thermal oxidation of In0.52Al0.48As and its potential application in current and optical confinement in vertical cavity surface emitting lasers (VCSELs). Two types of InP-based heterostructures were used to study the effect of adjacent layer compositions on the lateral oxidation behavior of the InAlAs. It was found that the oxidation of I0.52Al0.48As with InP adjacent layers, compared with In0.53Ga0.47As adjacent layers, proceeded faster, more uniformly and with minimal degradation of the surrounding layers making it ideal for optoelectronic applications. (C) 1998 American Institute of Physics.

引用

页码：135 / 137

页数：3

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