Junction delineation of 0.15μm MOS devices using scanning capacitance microscopy

被引：22

作者：

Kleiman, RN ^{[1
]}

O'Malley, ML ^{[1
]}

Baumann, FH ^{[1
]}

Garno, JP ^{[1
]}

Timp, GL ^{[1
]}

机构：

[1] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650477

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

With the increased scaling down of MOSFET dimensions, delineation of the p-n junction becomes increasingly important. We have studied cross-sectioned 0.15 micron process MOSFETs using a newly developed technique, scanning capacitance microscopy (SCM), and report the first direct measurement of the channel length for these state-of-the-art devices. Using a device simulator we have quantitatively established the connection between the dopant profile and the SCM response while scanning across a p-n junction. This allows us to determine the position of the p-n junction from the SCM measurements.

引用

页码：691 / 694

页数：4