Swift heavy ion radiation damage on high resistivity silicon

被引：11

作者：

Mangiagalli, P

Levalois, M

Marie, P

Rancoita, PG

Rattaggi, M

机构：

[1] ISMRA, LERMAT, F-14000 Caen, France

[2] Ist Nazl Fis Nucl, I-20100 Milan, Italy

来源：

NUCLEAR PHYSICS B | 1998年

关键词：

D O I：

10.1016/S0920-5632(97)00603-8

中图分类号：

O412 [相对论、场论]; O572.2 [粒子物理学];

学科分类号：

摘要：

Silicon radiation damage was investigated after irradiation with 6.7 MeV/a Ar-36 up to a fluence of 10(14) ions/cm(2) Hall effect, DLTS, PL and IR absorption measurements were performed before and after irradiation. Hall coefficient variation shows that Fermi level moves to the middle of gap and stabilizes for large fluxes at about 0.54 eV from the conduction band.

引用

页码：464 / 469

页数：6