Metal oxide gas sensor for high temperature application

被引：26

作者：

Gessner, T ^{[1
]}

Gottfried, K

Hoffmann, R

Kaufmann, C

Weiss, U

Charetdinov, E

Hauptmann, P

Lucklum, R

Zimmermann, B

Dietel, U

Springer, G

Vogel, M

机构：

[1] Tech Univ Chemnitz, Zentrum Mikrotechnol, D-09107 Chemnitz, Germany

[2] Otto Von Guericke Univ, Inst Mikro & Sensorsyst, D-39016 Magdeburg, Germany

[3] GPP Chemnitz MBH, D-09120 Chemnitz, Germany

来源：

MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS | 2000年 / 6卷 / 05期

关键词：

D O I：

10.1007/s005420000048

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The present study is focused on the development of a gas sensor for application in a high temperature environment. The sensor has been realised using thin films prepared on silicon substrates including a high temperature stable heating and wiring system. TiO2 acts as sensitive layer. Measurements have been carried out in synthetic gas mixtures as well as in gases in a given application. Neural networks and multivariate data analysis have been used for determining the gas concentrations. The capability to detect CO, NOx, and toluene is shown.

引用

页码：169 / 174

页数：6

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