Junction properties of Schottky diode with chemically prepared copolymer having hexylthiophene and cyclohexylthiophene units

被引：60

作者：

Saxena, V ^{[1
]}

Santhanam, KSV ^{[1
]}

机构：

[1] Tata Inst Fundamental Res, Chem Phys Grp, Bombay 400001, Maharashtra, India

来源：

CURRENT APPLIED PHYSICS | 2003年 / 3卷 / 2-3期

关键词：

conducting polymer; poly(3-alkylthiophene); diode and thermionic emission theory;

D O I：

10.1016/S1567-1739(02)00220-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A Schottky diode has been constructed from chemically synthesised copolymer of cyclohexyl and hexyl substituted thiophene units, and various metals such as In, Ag, Al, Sn, etc. The polymer film was deposited on SnO2 coated glass substrate using spin casting technique. The electrical properties of the diode have been investigated by current-voltage and capacitance-voltage measurements. These characteristics were compared with those of poly(3-cyclohexylthiophene) (P3cHT) and poly(3-n-hexylthiophene) (P3nHT) based diode. Junction parameters, such as, ideality factor (n) and barrier height (X) have been calculated by applying thermionic emission theory. The values of n and X for copolymer/metal junctions were found to be in between the corresponding values for P3cHT/metal and P3nHT/metal junctions. Poor performance of the copolymer/metal diode, compared to P3cHT was attributed to the steric effects produced by hexyl substituents present in the copolymer. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：227 / 233

页数：7

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