Development of II-VI high band gap devices for high efficiency tandem solar cells

被引：5

作者：

Mahawela, P ^{[1
]}

Jeedigunta, S ^{[1
]}

Ferekides, CS ^{[1
]}

Morel, DL ^{[1
]}

机构：

[1] Univ S Florida, Dept Elect Engn, Ctr Clean Energy & Vehicles, Tampa, FL 33620 USA

来源：

CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 | 2002年

关键词：

D O I：

10.1109/PVSC.2002.1190667

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Simulations indicate that efficiencies of 25-30% are attainable in-4-terminal, compound. semiconductor thin-film devices.. CIGS scan serve as the bottom cell, but a high band gap, transparent top cell with greater than 17% efficiency is needed. CdSe with an Eg of 1.7 eV and CdxZn1-xTe(CZT) that can also be. tuned to this range show high potential for this role. Using NUS structures we have - demonstrated the attainment of high electronic quality CdSe. External Jsc's of 14.7 mA/cm(2) have been on for attained without correction for substantial losses in the Cu contact. Similar progress has been made with CZT. High quality, single phase material-has been demonstrated.

引用

页码：724 / 727

页数：4