The I centre: A hydrogen related defect in silicon

被引：8

作者：

Gower, J ^{[1
]}

Davies, G ^{[1
]}

Lightowlers, EC ^{[1
]}

Safonov, AN ^{[1
]}

机构：

[1] Univ London Kings Coll, Dept Phys, London WC2R 2LS, England

来源：

DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 | 1997年 / 258-2卷

关键词：

hydrogen; luminescence; silicon; isoelectronic centre;

D O I：

10.4028/www.scientific.net/MSF.258-263.289

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The I-line luminescence system with zero-phonon transitions at 965.0 and 967.4 meV is created when Czochralski silicon is electron irradiated and subsequently annealed at temperatures greater than 400 degrees C. We report here that the centre contains two inequivalent carbon atoms and one hydrogen atom and that the uniaxial stress and Zeeman perturbations are consistent with a paramagnetic centre possessing monoclinic I symmetry. We propose that the core of the centre is a C-C-H complex, similar to that of the T-centre, perturbed by the presence of an oxygen atom.

引用

页码：289 / 294

页数：6